501 - Loss Calculation¶
Semiconductor conduction and switching loss modeling.
Overview¶
Accurate loss calculation is essential for: - Thermal design and heatsink sizing - Efficiency optimization - Component selection - Reliability prediction
Loss Components¶
Total Semiconductor Losses¶
Conduction Losses¶
MOSFET: $\(P_{cond,MOS} = I_{rms}^2 \cdot R_{DS(on)}\)$
IGBT: $\(P_{cond,IGBT} = V_{CE(sat)} \cdot I_{avg} + r_{CE} \cdot I_{rms}^2\)$
Diode: $\(P_{cond,D} = V_F \cdot I_{avg} + r_D \cdot I_{rms}^2\)$
Switching Losses¶
Where switching energies depend on: - Current at switching instant - Voltage being switched - Temperature (increases with temp)
Temperature Dependence¶
RDS(on) vs Temperature¶
Typical α ≈ 0.004 to 0.006 /°C (doubles at 150°C)
Switching Energy vs Temperature¶
GeckoCIRCUITS Loss Models¶
Setting Up Loss Parameters¶
- Open semiconductor properties
- Enable thermal model
- Enter datasheet values:
- RDS(on) or VCE(sat)
- Eon, Eoff at reference conditions
- Temperature coefficients
Data Entry Table¶
| Parameter | MOSFET | IGBT | Diode |
|---|---|---|---|
| V_on | - | VCE(sat) | VF |
| R_on | RDS(on) | rCE | rD |
| E_on | Eon | Eon | Qrr×V |
| E_off | Eoff | Eoff | - |
| E_rr | - | - | Err |
Example: Buck Converter Losses¶
High-Side MOSFET¶
Conduction: $\(P_{cond,HS} = D \cdot I_L^2 \cdot R_{DS(on)}\)$
Switching: $\(P_{sw,HS} = \frac{1}{2}V_{in} \cdot I_L \cdot (t_r + t_f) \cdot f_{sw}\)$
Low-Side Diode/MOSFET¶
Conduction: $\(P_{cond,LS} = (1-D) \cdot I_L \cdot V_F\)$
Inductor Losses¶
DC Copper Loss: $\(P_{Cu,DC} = I_{DC}^2 \cdot R_{DC}\)$
AC Copper Loss (skin effect): $\(P_{Cu,AC} = I_{AC,rms}^2 \cdot R_{AC}\)$
Core Loss (Steinmetz): $\(P_{core} = k \cdot f^{\alpha} \cdot B^{\beta} \cdot V_{core}\)$
Simulation Exercises¶
- Measure losses at different load currents
- Compare MOSFET vs IGBT at different frequencies
- Analyze loss breakdown pie chart
- Correlate losses with junction temperature rise